View PHM30NQ10T_1295494.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PHM30NQ10T
TrenchMOSTM standard level FET
Rev. 02 -- 11 September 2003
M3D879
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology.
1.2 Features
s SOT96 (SO-8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile.
1.3 Applications
s DC-to-DC primary side s Portable equipment applications.
1.4 Quick reference data
s VDS 100 V s Ptot 62.5 W s ID 37.6 A s RDSon 20 m
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 mb Pinning - SOT685 (QLPAK), simplified outline and symbol Description source (s) gate (g) drain (d) mounting base, connected to drain (d)
mb g 8 Bottom view 5
MBL585
Simplified outline
[1]
Symbol
1 4 d
MBB076
s
SOT685-1 (QLPAK)
[1] Shaded area indicates terminal 1 index area.
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
3. Ordering information
Table 2: Ordering information Package Name PHM30NQ10T QLPAK Description Plastic surface mounted package; no leads; 8 terminals. Version SOT685 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 14.2 A; tp = 0.31 ms; VDD 100 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C unclamped inductive load; ID = 1.4 A; tp = 0.031 ms; VDD 100 V; RGS = 50 ; VGS = 10 V
[1] [2]
Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1
Min -55 -55 -
Max 100 100 20 37.6 23.8 60 62.5 +150 +150 37.6 60 350
Unit V V V A A A W C C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy
-
3.5
mJ
[1] [2]
Duty cycle limited by maximum junction temperature. Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short bursts, not every switching cycle.
9397 750 11842
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
2 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
120 Pder (%) 80
03aa15
120 Ider (%) 80
03aa23
40
40
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 200 Tmb (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
ID I der = ------------------- x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
102 tp = 10 s ID (A) 100 s
03al14
10
Limit RDSon = VDS / ID 1 ms DC 10 ms
1
10-1 1 10 102 VDS (V) 103
Tmb = 25 C; IDM is single pulse; VGS = 10V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11842
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
3 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
5. Thermal characteristics
Table 4: Rth(j-mb) Thermal characteristics Conditions Min Typ Max Unit 2 K/W thermal resistance from junction to mounting base Figure 4 Symbol Parameter
5.1 Transient thermal impedance
10 Zth(j-mb) (K/W) 1 = 0.5 0.2 0.1 10-1 0.05 0.02 P 10-2 single pulse tp T 10-3 10-5 10-4 10-3 10-2 10-1
03al13
=
tp T
t
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11842
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
4 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain-source leakage current VDS = 80 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 18 A; Figure 7 and 8 Tj = 25 C Tj = 150 C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 18 A; VGS = 0 V; Figure 12 reverse recovery time recovered charge IS = 10 A; dIS/dt = -100 A/s; VGS = 0 V VDD = 50 V; RL = 56 ; VGS = 10 V; RG = 5.6 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 ID = 25 A; VDD = 50 V; VGS = 10 V; Figure 13 53.7 13.2 11.5 430 140 21 11 77 51 0.91 100 125 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC 17 37.4 20 44 m m 10 1 100 100 A A nA 2 1.2 3 4 4.4 V V V 100 89 V V Conditions Min Typ Max Unit
3600 -
Source-drain diode
9397 750 11842
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
5 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
60 Tj = 25 C ID (A) 40
03al15
10 V
6 V 5.5 V 5V
60 VDS > ID x RDSon ID (A) 40
03al17
4.5 V
20 4V
20 150 C Tj = 25 C
VGS = 3.5 V 0 0 0.5 1 1.5 VDS (V) 0 0 2 4 VGS (V) 6
Tj = 25 C
Tj = 25 C and 150 C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
40 RDSon (m) 30 Tj = 25 C
03al16
3 a
03al21
VGS = 5 V
2.5
2 5.5 V 6V 10 V 1 10 0.5
20
1.5
0 0 20 40 ID (A) 60
0 -60 0 60 120 Tj (C) 180
Tj = 25 C
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 11842
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
6 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2
03aa35
3
typ
10-3
min
typ
max
2
min
10-4
1
10-5
0 -60 0 60 120 Tj (C) 180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
104
03al19
C (pF)
Ciss
103
Coss
102 10-1
Crss 1 10 VDS (V) 102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 11842
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
7 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
60 VGS = 0 V IS (A) 40
03al18
10 VGS (V) 8 ID = 25 A Tj = 25 C VDD = 20 V 6
03al20
50 V 80 V
4 20 150 C Tj = 25 C 2
0 0 0.5 1 VSD (V) 1.5
0 0 20 40 QG (nC) 60
Tj = 25 C and 150 C; VGS = 0 V
ID = 25 A; VDD = 20 V, 50 V, 80 V
Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 13. Gate-source voltage as a function of gate charge; typical values.
9397 750 11842
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
8 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
7. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 6 x 5 x 0.85 mm SOT685-1
0 X D B A
2.5 scale
5 mm
A A1 c
E detail X
terminal 1 index area
terminal 1 index area 1 L
e1 e b 4 vMCAB wMC y1 C
C y
Eh eh
exposed tie bar (4x)
8 Dh DIMENSIONS (mm are the original dimensions) UNIT mm A (1) max. 1 A1 0.05 0.00 b 0.5 0.3 c 0.2 D (1) 5.15 4.85 Dh 3.95 3.65 E (1) 6.15 5.85
5
Eh 3.65 3.35
e 1.27
e1 3.81
eh 0.35
L 0.75 0.50
v 0.1
w 0.05
y 0.05
y1 0.1
Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT685-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-08-12 02-11-27
---
Fig 14. SOT685-1 (QLPAK).
9397 750 11842 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
9 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
8. Soldering
handbook, full pagewidth
Cu covered with solder resist solder lands
solder resist 0.075 clearance 0.150 6.00 5.90 4.60 3.85 0.50 (8x) 0.75 (8x) occupied area placement area solder paste 0.050
3.45 2.025 2.50 7.25 7.00 1.905 1.525 2.30 0.40 0.15 1.40 6.40 2.175 2.35
MGX371
0.05 SP around (4x)
1.27 0.60 (4x) 0.40 2.60 5.40 6.25 0.85 (4x)
Dimensions in mm.
Fig 15. Reflow soldering footprint for SOT685-1 (QLPAK).
9397 750 11842
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
10 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
9. Revision history
Table 6: Rev Date 02 20030911 Revision history CPCN Description Product data (9797 750 11842) Modifications:
* * * *
01 20030129 -
Section 3 "Ordering information" Addition of ordering information. Section 4 "Limiting values" Addition of EDS(AL)S. Section 4 "Limiting values" Addition of EDS(AL)R. Section 8 "Soldering" Addition of soldering footprint.
Preliminary data (9397 750 10879)
9397 750 11842
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
11 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
10. Data sheet status
Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
13. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 11842
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 11 September 2003
12 of 13
Philips Semiconductors
PHM30NQ10T
TrenchMOSTM standard level FET
Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
(c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 September 2003 Document order number: 9397 750 11842

▲Up To Search▲

Price & Availability of PHM30NQ10T

	To Download PHM30NQ10T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .